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BAS16W
Silicon Epitaxial Planar Small Signal Diode
High Speed Switching Diode
3
1
Absolute Maximum Ratings (Ta = 25 OC)
Parameter Repetitive Peak Reverse Voltage Continuous Reverse Voltage Continuous Forward Current (at TS = 90 OC) Repetitive Peak Forward Current Non-repetitive Peak Forward Current at Square Wave; Tj = 25 OC Prior to Surge t = 1 s t = 1 ms t=1s Total Power Dissipation (at TS = 90 OC) Thermal Resistance from Junction to Soldering Point Junction Temperature Storage Temperature Range
2
Marking Code: A6
Symbol VRRM VR IF IFRM IFSM Ptot Rth j-S Tj Tstg
Value 85 75 155 500 4 1 0.5 170 350 150 - 65 to + 150
Unit V V mA mA A mW K/W
O
C C
O
Characteristics at Ta = 25 OC
Parameter Forward Voltage at IF = 1 mA at IF = 10 mA at IF = 50 mA at IF = 150 mA Reverse Current at VR = 25 V at VR = 75 V at VR = 25 V, TJ = 150 OC at VR = 75 V, TJ = 150 OC Diode Capacitance at f = 1 MHz Reverse Recovery Time when switched from IF = 10 mA to IR = 10 mA, RL = 100 ; measured at IR = 1 mA Forward Recovery Voltage when switched from IF = 10 mA, tr = 20 ns Symbol VF VF VF VF IR IR IR IR CD trr Vfr Max. 715 855 1000 1250 30 1 30 50 1.5 4 1.75 Unit mV mV mV mV nA A A A pF ns V
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 02/08/2006
BAS16W
SEMTECH ELECTRONICS LTD.
(R)
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 02/08/2006

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